Beilstein J. Nanotechnol.2018,9, 2032–2039, doi:10.3762/bjnano.9.192
, Kapeldreef 75, B-3001 Leuven, Belgium 10.3762/bjnano.9.192 Abstract Hall effect metrology is important for a detailed characterization of the electronic properties of new materials for nanoscale electronics. The micro-Hall effect (MHE) method, based on micro four-pointprobes, enables a fast
mobility.
Keywords: four-pointprobes; Hall effect; metrology; mobility; variable Probe Pitch; Introduction
Materials characterization becomes increasingly difficult as the dimensions of transistors continue to decrease. Although three dimensional electrical characterization is the ultimate goal of
the exact distance between the probe and the insulating boundary. To this end, different measurement strategies have been described using micro four-pointprobes [4][9][10][11]. Most recently, a strategy based on variable probe pitch measurements using a multi-point probe with different subsets of
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Figure 1:
The standard probe pin configurations A, A’, B and B’ used in the experiments.